On the microstructure and electrical properties of undoped and antimony-doped tin oxide thin film deposited by sol-gel process

被引：3

作者：

Du, G ^{[1
]}

Zhang, DL ^{[1
]}

Zhao, L ^{[1
]}

Xu, JM ^{[1
]}

Zhou, DX ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, MOE Engn Res Ctr Funct Ceram, Dept Elect Sci & Technol, Wuhan 430074, Hubei Province, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2 | 2005年 / 280-283卷

关键词：

ATO; thin films; sol-gel;

D O I：

10.4028/www.scientific.net/KEM.280-283.835

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Omega/square.

引用

页码：835 / 838

页数：4

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