Ab initio calculations of interface effects in tunnelling through MgO barriers on Fe(100)

被引：33
|
作者：
Wortmann, D [1 ]
Bihlmayer, G
Blügel, S
机构：
[1] AIST, Inst Computat Sci, Tsukuba, Ibaraki 3068568, Japan
[2] Forschungszentrum, Inst Festkorperforsch, D-52425 Julich, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 48期
关键词：
D O I：
10.1088/0953-8984/16/48/056
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The tunnel-magneto-resistance (TMR) effect has been extensively studied in the last couple of years. While some experiments showed a strong dependence on the metal-insulator interface in these systems, most theoretical work gave little emphasis to the complicated interplay between electronic structure, atomic structure and the tunnelling process. We present calculations of the atomic structure of Fe/MgO/Fe(001) interfaces and its influence on the electronic structure. The tunnel current is calculated using the Landauer approach to describe the electron transport.
引用
收藏
页码：S5819 / S5822
页数：4
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