Ring Oscillator Switching Noise under NBTI Wearout

被引：0

作者：

Fernandez-Garcia, R. ^{[1
]}

Gil, I. ^{[1
]}

Ruiz, J. M. ^{[2
]}

Morata, M. ^{[2
]}

机构：

[1] UPC Barcelona Tech, Elect Engn Dept, Colom 1, Terrassa 08222, Spain

[2] Escuela Univ Salesiana Sarria, Barcelona 08017, Spain

来源：

10TH INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY | 2011年

关键词：

Switching Noise; EMC prediction; CMOS circuits; NBTI; BIAS TEMPERATURE INSTABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout.

引用

页码：294 / 297

页数：4

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