Theoretical analysis and experimental results on the modulated photocarrier grating technique

被引:2
|
作者
Schmidt, J. A. [1 ,2 ,3 ]
Budini, N. [1 ,2 ,3 ]
Ventosinos, F. [1 ,2 ,3 ]
Longeaud, C. [4 ,5 ]
机构
[1] Consejo Nacl Invest Cient & Tecn, INTEC, RA-3450 Guemes, Santa Fe, Argentina
[2] Consejo Nacl Invest Cient & Tecn, FIQ, RA-3450 Guemes, Santa Fe, Argentina
[3] UNL, RA-3450 Guemes, Santa Fe, Argentina
[4] Univ Paris 06, CNRS, UMR 8507, LGEP, F-91190 Gif Sur Yvette, France
[5] Univ Paris 11, F-91190 Gif Sur Yvette, France
关键词
DIFFUSION LENGTH MEASUREMENT; SEMICONDUCTORS; PHOTOCURRENT; INSULATORS;
D O I
10.1002/pssa.200982707
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a complete theoretical analysis of the modulated photocarrier grating method (MPG). Our calculations,show that the response of the sample will be not only a photocurrent modulated with the frequency f of the illumination, but also a response in dc and with frequency 2f. In order to put to test our calculations, we implement experimentally the MPG technique and we apply it to a hydrogenated amorphous silicon sample. We verify the existence of a response at frequency 2f, and we measure the relative intensity of this signal which compares well with the result of our theoretical calculation. We also show that under certain conditions the density of states (DOS) at the quasi-Fermi level for the majority carriers is related to the ratio of the MPG and modulated photoconductivity (MPC) signals. We present simple formula that allows estimatuing the DOS as a function of energy by changing the temperature and the generation rate. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:556 / 560
页数:5
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