Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

被引：0

作者：

Ling, CC ^{[1
]}

Beling, CD

Gong, M

Chen, XD

Fung, S

机构：

[1] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China

[2] Sichuan Univ, Dept Phys, Chengdu 610064, Sichuan, Peoples R China

来源：

DEFECTS AND DIFFUSION IN SEMICONDUCTORS: ANNUAL RETROSPECTIVE III | 2000年 / 183-1卷

关键词：

DLTS; PAS; silicon carbide; defects; electron irradiation; ion implantation;

D O I：

10.4028/www.scientific.net/DDF.183-185.1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on as grown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques.

引用

页码：1 / 23

页数：23

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