FPLAPW investigations of electronic properties of IIB-VI tellurides in the generalized gradient approximation

被引:0
|
作者
Duan, H. [1 ]
Chen, X. S. [1 ]
Huang, Y. [1 ]
Zhou, X. H. [1 ]
Lu, W. [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electronic properties of zinc-blend ZnTe, CdTe and HgTe are systematically investigated using the FLAPW approach. We find that the essential features of density of states, the influence of d electrons on the band structure, and electronic charge distributions are insensitive to the choice of exchange-correlation potential. Some calculated fundamental parameters show an agreement with experimental and theoretical results.
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页码:121 / 121
页数:1
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