Power scaling of a Z-pinch extreme ultraviolet source

被引:11
|
作者
McGeoch, MW [1 ]
机构
[1] PLEX LLC, Brookline, MA 02446 USA
来源
关键词
extreme ultraviolet; lithography; source; Z-pinch; xenon;
D O I
10.1117/12.390043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A xenon Z-pinch(1,2) generating extreme ultraviolet radiation at the Mo-Si mirror wavelength of 13.5nm has been scaled to emit increased power at a higher repetition frequency. The 25mm long by 3.0mm (FWHM) diameter pinch produces 1.5W of EUV radiation (2.5% bandwidth) into an axial 0.1sr solid angle when operated at 100Hz (100J stored). The measured average pinch liner heat load at 100Hz is 37W cm(-2), corresponding to an average internal wall temperature of 80 degrees C. Electrode and liner erosion is very slight after more than 10(6) pulses at 100Hz. Source cleanliness was demonstrated via a two-mirror simulation of a condenser in which throughput was unchanged during a 10(6) pulse run at 50Hz. Amplitude stability was 12% (3 sigma) and positional stability was less than 4% of source diameter (1 sigma). 13.5nm output scaled linearly with repetition frequency to more than 150Hz (58J stored). The cost of ownership for this source is estimated to be no greater than for an excimer laser illuminator. A plan is outlined for continued development to >1kHz and usable power of 16W.
引用
收藏
页码:861 / 866
页数:6
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