Modeling of temperature effects on band structure in type-II superlattices using an empirical tight-binding method

The band edge energy and effective mass of type II superlattices on a (0 0 1) GaSb substrate at different temperatures have been investigated using the empirical sp(3)s* tight-binding method. The band gap of InAs/GaSb superlattices and InAs/GaSb/AlSb/GaSb M-structure as a function of temperature is fitted using empirical Varshni's equation. The effective mass as a function of temperature was also calculated by employing the numerical second derivative of the band energy dispersion curve. Based on the above calculation model, the analytical and numerical model of P-pi-M-N device structure of superlattices model as an example was established to describe the dependence of band structure on the working temperature, which will provide guidance to achieve the higher performance.