Modeling of temperature effects on band structure in type-II superlattices using an empirical tight-binding method

被引：1

作者：

Zhu, Xubo ^{[1
,2
,3
,4
]}

Jie, Wanqi ^{[1
]}

Lyu, Yanqiu ^{[2
,3
,4
]}

Peng, Zhenyu ^{[2
,3
,4
]}

Wang, Jinchun ^{[2
,3
,4
,5
]}

He, Yingjie ^{[2
,3
,4
]}

Li, Mo ^{[2
,3
,4
]}

Zhang, Lixue ^{[2
,3
,4
]}

Ji, Zhenming ^{[2
,4
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China

[2] China Airborne Missile Acad, Luoyang 471099, Peoples R China

[3] Aviat Key Lab Sci & Technol Infrared Detector, Luoyang 471099, Peoples R China

[4] Henan Antimonide Infrared Detector Engn Technol C, Luoyang 471099, Peoples R China

[5] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 07期

关键词：

Tight-binding; Type-II superlattices; M-structure; Band structure; Effective mass; PARAMETERS; SEMICONDUCTORS; ANTIMONIDE;

D O I：

10.1007/s00339-022-05740-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band edge energy and effective mass of type II superlattices on a (0 0 1) GaSb substrate at different temperatures have been investigated using the empirical sp(3)s* tight-binding method. The band gap of InAs/GaSb superlattices and InAs/GaSb/AlSb/GaSb M-structure as a function of temperature is fitted using empirical Varshni's equation. The effective mass as a function of temperature was also calculated by employing the numerical second derivative of the band energy dispersion curve. Based on the above calculation model, the analytical and numerical model of P-pi-M-N device structure of superlattices model as an example was established to describe the dependence of band structure on the working temperature, which will provide guidance to achieve the higher performance.

引用

页数：7

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