Enhanced Electro-Optic Phase Modulation in InGaAs Quantum Posts at 1500 nm

被引：2

作者：

Shin, JaeHyuk ^{[1
]}

Kim, Hyochul ^{[2
]}

Petroff, Pierre M. ^{[1
,3
]}

Dagli, Nadir ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2010年 / 46卷 / 07期

基金：

美国国家科学基金会;

关键词：

Optical waveguide components; phase modulation; quantum dots; semiconductor waveguides; ALGAAS DOUBLE HETEROSTRUCTURES; OPTICAL-PROPERTIES; GAAS; ELECTROABSORPTION; GROWTH;

D O I：

10.1109/JQE.2010.2044975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electro-optic properties of self assembled InGaAs quantum posts have been studied experimentally. For TE polarization phase modulation enhancement up to 27% over devices containing InGaAs quantum well of the same average composition and thickness was observed indicating significant electro-optic coefficient increase in quantum posts. The measured linear and quadratic electro-optic coefficients of the quantum posts were as high as 17.8 x 10(-12) m/V and 49.4 x 10(-21) m(2)/V-2 at 1500 nm which are more than an order of magnitude larger than those of GaAs.

引用

页码：1127 / 1131

页数：5

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