Analysis of radiative recombination and optical gain in gallium nitride-based heterostructures

被引：0
|
作者：
Eliseev, PG [1 ]
Smagley, VA [1 ]
Osinski, M [1 ]
机构：
[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131
来源：
COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷
关键词：
D O I：
10.1557/PROC-421-419
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：419 / 424
页数：6
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