Photovoltaic efficiency enhancement through thermal up-conversion

被引:9
|
作者
Ekins-Daukes, NJ
Ballard, I
Calder, CDJ
Barnham, KWJ
Hill, G
Roberts, JS
机构
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BW, England
[2] Univ Sheffield, Dept Elect Engn, EPSRC Facil 3 5, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1063/1.1561159
中图分类号
O59 [应用物理学];
学科分类号
摘要
Anti-Stokes emission is observed experimentally from a series of quantum well p-i-n structures and is attributed to a quasithermal equilibrium being established between the quantum well and barrier material. A device is described whereby the anti-Stokes emission from a quantum well p-i-n structure can be used to increase the short-circuit current of a second conventional solar cell, essentially coupling sub-band-gap sunlight to the ambient thermal reservoir. For a GaAs p/n cell at 300 K, this effect is calculated to raise the one-sun power conversion efficiency from 30.0% to 31.3%. Greater efficiency increases are possible if a thermal gradient is established across the structure. (C) 2003 American Institute of Physics.
引用
收藏
页码:1974 / 1976
页数:3
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