A MOS transistor thermal sub-circuit for the SPICE circuit simulator

被引：5
|
作者：
Nooshabadi, S [1 ]
Visweswaran, GS
Nagchoudhuri, D
机构：
[1] No Terr Univ, Sch Elect Engn, Darwin, NT 0909, Australia
[2] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India
来源：
MICROELECTRONICS JOURNAL | 1998年 / 29卷 / 4-5期
关键词：
D O I：
10.1016/S0026-2692(97)00062-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the design of a SPICE sub-circuit for the MOS transistor to model the thermal effects under dynamic thermal conditions. This makes simulation of temperature critical analogue macrofunctions more accurate and efficient. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：229 / 234
页数：6
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