Characterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit

被引：6

作者：

Maouad, A

Hoffmann, A

Khoury, A

Charles, JP

机构：

[1] Supelec, Ctr Lorrain Opt & Elect Solides, F-57070 Metz, France

[2] Univ Libanaise, Dept Phys, Jdeidet, Lebanon

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 06期

关键词：

D O I：

10.1016/S0026-2714(00)00002-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Insulated Gate Bipolar Transistors are devices integrating a MOSFET and a bipolar transistor in a Darlington configuration. These devices have been studied before and after conduction stress. During high temperature operations (200 degrees C) hot carriers call induce degradation in gate oxide, at silicon-oxide interface and into the base-emitter junction. The used IGBT SPICE sub-circuit can describe electrical aging in dynamic and static operation. The knowledge of which parameters are influenced during specific functional stress permits us to compensate for these changes or improve the implementation of the component in a circuit, as well as its use in field conditions. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：973 / 979

页数：7

共 14 条

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