Magnetic order in GaMnAs layers

被引：3
|
作者：
Fedorych, O
Wilamowski, Z
Potemski, M
Byszewski, M
Sadowski, J
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] CNRS, MPI, Grenoble High Magnet Field Lab, F-38042 Grenoble, France
[3] Univ Copenhagen, Oersted Lab, DK-2100 Copenhagen, Denmark
[4] Chalmers Univ Technol, Dept Expt Phys, SE-41296 Gothenburg, Sweden
[5] Univ Gothenburg, SE-41296 Gothenburg, Sweden
来源：
JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期
关键词：
spintronic; diluted magnetic semiconductor; ferromagnetism;
D O I：
10.1023/A:1023272315269
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MBE grown Ga1-xMnxAs layers were investigated by means of magnetic resonance techniques. Two phases can be distinguished: an almost isotropic ferromagnetic phase in insulating layers and an anisotropic ferromagnetic phase in the metallic Ga1-xMnxAs. Under a strong magnetic field the field-induced insulator-to-metal transition is accompanied by the change from the ferromagnetic to the ferrimagnetic phase.
引用
收藏
页码：51 / 53
页数：3
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