A 10MHz GaN Driver with Gate Ringing Suppression and Active Bootstrap Control

被引：11
|
作者：
Li, Sheng Teng [1 ]
Wang, Pin Ying [1 ]
Chen, Ching Jan [1 ]
Hsu, Chih-Chao [2 ]
机构：
[1] Natl Taiwan Univ, Power Elect Lab, Taipei, Taiwan
[2] Natl Chung Shan Inst Sci & Technol, Taoyuan, Taiwan
来源：
2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019) | 2019年
关键词：
GaN; Driver; Bootstrap; DCDC converter; gate ringing suppression gate driver;
D O I：
10.1109/wipdaasia.2019.8760313
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Targeting on gate ringing suppression in gallium nitride (GaN) dc-dc converter. This paper presents a 10MHz switching frequency gate driver for GaN-based buck converter which including a fixed dead time modulator to prevent high side and low side shoot-through issue, active bootstrap control is necessary for GaN application because of the leakage of body diode to control bootstrap circuit voltage under 5V, gate ringing suppression gate driver is used to provide multi-slew rate driving current furthermore reducing voltage spike appears at power devise and a high voltage level shifter. Ths work fabricated in a 0.25-mu m Bipolar-CMOS-DMOS process.
引用
收藏
页数：4
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