Si deposition on CeO2/Si(111)

被引：0
|
作者：
Shitara, S [1 ]
Yamaguchi, K [1 ]
Yamamoto, Y [1 ]
Satoh, M [1 ]
Inoue, T [1 ]
机构：
[1] Hosei Univ, Coll Engn, Dept Elect Informat, Koganei, Tokyo 184, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16 | 1997年
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O59 [应用物理学];
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摘要：
Silicon films have been deposited on epitaxially grown CeO2 (111)/Si(111) by electron beam evaporation in UHV or under the oxygen partial pressure ranging from 1.5 x 10(-6) to 4.0 x 10(-6) Torr. RES measurement reveals the following; At 800 degrees C the amount of the deposited Si is less than intended. The deposited Si films were polycrystalline due to the reduction of CeO2 at the surface above 750 degrees C. The reduction doesn't occur at the CeO2 surface and SiO2 films don't form at the Si/CeO2 at 700 degrees C. However, the Si film which deposited at 700 degrees C was polycrystalline.
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页码：109 / 114
页数：6
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