Rigorous modeling of carbon nanotube transistors

被引：16
|
作者：
Pourfath, Mahdi [1 ]
Kosina, Hans [1 ]
Selberherr, Siegfried [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, Gusshausstr 27-29, A-1040 Vienna, Austria
来源：
SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 | 2006年 / 38卷
关键词：
D O I：
10.1088/1742-6596/38/1/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the non-equilibrium Green's function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the performance is not affected because of the long mean free path for elastic scattering.
引用
收藏
页码：29 / +
页数：2
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