The investigation of properties of electron transport in AlGaN/GaN heterostructures

被引：2
|
作者：
Danylyuk, SV [1 ]
Vitusevich, SA
Podor, B
Belyaev, AE
Avksentyev, AY
Tilak, V
Smart, J
Vertiatchikh, A
Eastman, LF
机构：
[1] Forschungszentrum, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, Budapest, Hungary
[3] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[4] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
Shubnikov-de Haas oscillations; piezoelectric polarization; transmission line model;
D O I：
10.1016/S0026-2692(03)00052-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Magnetoresistance of two-dimensional electron gas in the triangular quantum well created as a result of polarization effects at AlGaN/GaN heterointerface has been studied. Magnetotransport measurements clearly revealed Shubnikov-de Haas oscillations in both two terminal transmission line model samples and three terminal high electron mobility transistor structures at low temperature. Low value of quantum scattering time was obtained for different structures. Region with negative magnetoresistance was observed at low magnetic field. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：575 / 577
页数：3
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