Acoustic deformation potentials of n-type PbTe from first principles

被引:16
|
作者
Murphy, Aoife R. [1 ,2 ]
Murphy-Armando, Felipe [2 ]
Fahy, Stephen [1 ,2 ]
Savic, Ivana [2 ]
机构
[1] Univ Coll Cork, Dept Phys, Coll Rd, Cork T12 K8AF, Ireland
[2] Tmndall Natl Inst, Cork T12 R5CP, Ireland
基金
爱尔兰科学基金会;
关键词
TOTAL-ENERGY CALCULATIONS; TEMPERATURE-DEPENDENCE; TRANSPORT PHENOMENA; LEAD CHALCOGENIDES; CURRENT CARRIERS; PBSE; PSEUDOPOTENTIALS; SEMICONDUCTORS; SCATTERING;
D O I
10.1103/PhysRevB.98.085201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the uniaxial and dilatation acoustic deformation potentials Xi(L)(u) and Xi(L)(d) of the conduction band L valleys of PbTe from first principles, using the local density approximation (LDA) and hybrid functional (HSE03) exchange-correlation functionals. We find that the choice of a functional does not substantially affect the effective band masses and deformation potentials as long as a physically correct representation of the conduction band states near the band gap has been obtained. Fitting of the electron-phonon matrix elements obtained in density functional perturbation theory (DFPT) with the LDA excluding spin-orbit interaction (SOI) gives Xi(L)(u) = 7.0 eV and Xi(L)(d) = 0.4 eV. Computing the relative shifts of the L valleys induced by strain with the HSE03 functional including SOI gives Xi(L)(u) = 5.5 eV and Xi(L)(d) = 0.8 eV, in good agreement with the DFPT values. Our calculated values of Xi(L)(u) agree fairly well with experiment (similar to 3-4.5 eV). The computed values of Xi(L)(d) are substantially smaller than those obtained by fitting electronic transportmeasurements (similar to 17-22 eV), indicating that intravalley acoustic phonon scattering in PbTe is much weaker than previously thought.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] MAGNETOPHONON RESONANCE IN N-TYPE PB0.8SN0.2TE AND N-TYPE PBTE
    MOZHAEV, EA
    GEIMAN, KI
    MATVEENKO, AV
    MASHOVETS, DV
    PARFENEV, RV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1403 - 1404
  • [22] First-principles study of n-type dopants and their clustering in SiC
    Rurali, R
    Godignon, P
    Rebollo, J
    Hernández, E
    Ordejón, P
    APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4298 - 4300
  • [23] Thermal conductivity in PbTe from first principles
    Romero, A. H.
    Gross, E. K. U.
    Verstraete, M. J.
    Hellman, Olle
    PHYSICAL REVIEW B, 2015, 91 (21)
  • [24] Direct electrodeposition of PbTe thin films on n-type silicon
    Li, Xiaohong
    Nandhakumar, Iris S.
    ELECTROCHEMISTRY COMMUNICATIONS, 2008, 10 (03) : 363 - 366
  • [25] MOBILITY OF N-TYPE PBTE FOR TEMPERATURES BELOW 50 K
    GRANGER, R
    LASBLEY, A
    PELLETIER, CM
    ROLLAND, S
    JOURNAL DE PHYSIQUE, 1985, 46 (07): : 1185 - 1192
  • [27] Optimized Strategies for Advancing n-Type PbTe Thermoelectrics: A Review
    Zhong, Yan
    Tang, Jing
    Liu, Hangtian
    Chen, Zhiwei
    Lin, Liwei
    Ren, Ding
    Liu, Bo
    Ang, Ran
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (44) : 49323 - 49334
  • [28] Local nanostructures enhanced the thermoelectric performance of n-type PbTe
    Xiang, Bo
    Liu, Jiaqin
    Yan, Jian
    Xia, Minggang
    Zhang, Qi
    Chen, Lingxue
    Li, Jiayong
    Tan, Xian Yi
    Yan, Qingyu
    Wu, Yucheng
    JOURNAL OF MATERIALS CHEMISTRY A, 2019, 7 (31) : 18458 - 18467
  • [29] Theoretical analysis of field emission cooling of N-type PbTe
    Cheon, Jung P.
    Yoon, Byung-G.
    Chung, Moon S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (10) : 1565 - 1569
  • [30] Theoretical analysis of field emission cooling of N-type PbTe
    Jung P. Cheon
    Byung-G. Yoon
    Moon S. Chung
    Journal of the Korean Physical Society, 2012, 60 : 1565 - 1569