Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

被引：0

作者：

Gutierrez-Aitken, Augusto ^{[1
]}

Monier, Cedric ^{[1
]}

Chang, Pablo ^{[1
]}

Kaneshiro, Eric ^{[1
]}

Scott, Dennis ^{[1
]}

Chan, Beckie ^{[1
]}

D'Amore, Matt ^{[1
]}

Lin, Steven ^{[1
]}

Oyama, Bert ^{[1
]}

Sato, Ken ^{[1
]}

Cavus, Abdullah ^{[1
]}

Oki, Aaron ^{[1
]}

机构：

[1] Northrop Grumman Aerosp Syst, Redondo Beach, CA 90278 USA

来源：

2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009 | 2009年

关键词：

InP; HBT; III-V semiconductors; high-speed microelectronics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.

引用

页码：125 / 128

页数：4

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