Low temperature recovery of Ru/(Ba,Sr)TiO3/Ru capacitors degraded by forming gas annealing

被引：10
|
作者：
Iizuka, T
Arita, K
Yamamoto, I
Yamamichi, S
Yamaguchi, H
Matsuki, T
Sone, S
Yabuta, H
Miyasaka, Y
Kato, Y
机构：
[1] NEC Corp Ltd, ULSI Device Dev Lab, Sagamihara, Kanagawa 2291198, Japan
[2] NEC Corp Ltd, Funct Mat Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 4B期
关键词：
(Ba; Sr)TiO3; Ru electrode; thin film capacitor; forming gas annealing; low temperature; post-annealing; DRAM;
D O I：
10.1143/JJAP.39.2063
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low temperature N-2 post-annealing process was proposed to improve the degradation of Ru/(Ba, Sr)TiO3/Ru capacitors due to forming gas annealing. After N-2 post-annealing at 300 degrees C, the leakage current degraded by forming gas annealing was completely recovered to the initial level without affecting the SiO2 equivalent thickness of 0.51 nm. No degradation of the subthreshold characteristics of n-channel metal-oxide-semiconductor field effect transistors and N+P junction leakage current by the post-annealing was also confirmed. The Ru/(Ba, Sr)TiO3/Ru capacitor technology with this post-annealing process is suitable for dynamic random access memories in 0.13 mu m generation and beyond.
引用
收藏
页码：2063 / 2067
页数：5
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