Rapid thermal processing: A comprehensive classification of silicon materials

被引：8

作者：

Peters, S ^{[1
]}

Lee, JY ^{[1
]}

Ballif, C ^{[1
]}

Borchert, D ^{[1
]}

Glunz, SW ^{[1
]}

Warta, W ^{[1
]}

Willeke, G ^{[1
]}

机构：

[1] Fraunhofer ISE, Lab & Serv Ctr, D-45884 Gelsenkirchen, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190494

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Depending on the specific impurities and defect spectrum of a silicon material, the minority carrier lifetime can react diversely to Rapid Thermal Processing (RTP). We have measured the lifetime of silicon materials before and after RTP and have diffused solar cells either by RTP or by conventional quartz tube furnace processing (CFP). Our investigations show that the lifetime of Fz-Si can be preserved during RTP resulting in up to 18.7% efficient solar cells. For 1.4 Omegacm PV-grade Cz-Si, the stable lifetime after light degradation could be improved by up to 60% by RTP. In the case of EFG-Si, the same average cell efficiency was obtained with RTP diffusion as with the industrial reference diffusion process. However, in the case of block-cast mc-Si, the lifetime decreases with increasing diffusion temperature indicating that P-diffusion in the second range might provide insufficient gettering.

引用

页码：214 / 217

页数：4

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