Silanization of Porous Silicon Surface for Ion-Sensor Applications

被引：4
|
作者：
Meskini, O. [1 ]
Tlili, A. [3 ]
M'ghaieth, R. [1 ]
Jaffrezic-Renault, N. [2 ]
Abdelghani, A. [3 ]
机构：
[1] Fac Sci, LPSCM, Monastir 5000, Tunisia
[2] Univ Lyon 1, Sci Analyt Lab, UMR 5180, F-69622 Villeurbanne, France
[3] IPEST, Unite Rech Phys Semicond & Capteurs, Tunis 2070, Tunisia
来源：
SENSOR LETTERS | 2009年 / 7卷 / 05期
关键词：
Porous Silicon; Passivation; Silanization; Calix[4]arene; Sodium Ion;
D O I：
10.1166/sl.2009.1172
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
This paper shows the possibility of using modified porous silicon (PS) surface by silanization as a transducter material for ion-sensor applications. The passivated electrode is characterized through cyclic voltammetry and through capacitance measurements showing good insulating properties of the aminopropyl-triethoxysilane (APTS) monolayer. The passivated electrode presents a linear pH response with a slope close to 61 mV per pH unit. This sub-Nernstian response is correlated with physical parameters of porous silicon samples and the amine site at the electrode surface. In a second step, the silanized PS electrode has been functionalized with tertiobutylcalix[4]arene (CA) molecules. We observed a sub-Nernstian response (157 mV/pNa) showing the high potentiality of the silanized PS electrode as a base for sensitive ionic potentiometric sensors.
引用
收藏
页码：913 / 916
页数：4
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