Effect of oxygen on the surface conductance of porous silicon: towards room temperature sensor applications

被引：13
|
作者：
Green, S [1 ]
Kathirgamanathan, P [1 ]
机构：
[1] S Bank Univ, Sch Elect Elect & Informat Engn, Ctr Elect Mat Engn, London SE1 0AA, England
来源：
MATERIALS LETTERS | 2002年 / 52卷 / 1-2期
关键词：
oxygen; surface conductance; porous silicon;
D O I：
10.1016/S0167-577X(01)00376-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface conductance of an aluminum/p-type porous silicon device is reversibly changed on exposure to gaseous oxygen. The aluminum electrode gap has been found to cause a four-fold increase in initial rate (if change of conductance on doubling the electrode separation on exposure to oxygen. Potential use of such devices in room temperature oxygen sensing is described. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：106 / 113
页数：8
相关论文
共 50 条
  • [1] ROOM-TEMPERATURE BACKBOND OXIDATION OF THE POROUS SILICON SURFACE BY OXYGEN RADICAL IRRADIATION
    OKEEFFE, P
    AOYAGI, Y
    KOMURO, S
    KATO, T
    MORIKAWA, T
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (07) : 836 - 838
  • [2] NO2 monitoring at room temperature by a porous silicon gas sensor
    Boarino, L
    Baratto, C
    Geobaldo, F
    Amato, G
    Comini, E
    Rossi, AM
    Faglia, G
    Lérondel, G
    Sberveglieri, G
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 210 - 214
  • [3] Silanization of Porous Silicon Surface for Ion-Sensor Applications
    Meskini, O.
    Tlili, A.
    M'ghaieth, R.
    Jaffrezic-Renault, N.
    Abdelghani, A.
    [J]. SENSOR LETTERS, 2009, 7 (05) : 913 - 916
  • [4] Porous silicon for sensor applications
    Nassiopoulou, AG
    [J]. NANOSTRUCTURED AND ADVANCED MATERIALS FOR APPLICATIONS IN SENSOR, OPTOELECTRONIC AND PHOTOVOLTAIC TECHNOLOGY, 2005, 204 : 189 - 204
  • [5] Room temperature NO2 gas sensor based on stain-etched porous silicon: Towards a low-cost gas sensor integrated on silicon
    Mhamdi, H.
    Azaiez, K.
    Fiorido, T.
    Zaghouani, R. Benabderrahmane
    Lazzari, J. L.
    Bendahan, M.
    Dimassi, W.
    [J]. INORGANIC CHEMISTRY COMMUNICATIONS, 2022, 139
  • [6] Room temperature gas sensor based on porous silicon/metal oxide structure
    Arakelyan, V. M.
    Martirosyan, Kh. S.
    Galstyan, V. E.
    Shahnazaryan, G. E.
    Aroutiounian, V. M.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 6, 2007, 4 (06): : 2059 - +
  • [7] The room temperature oxidation of porous silicon
    Salonen, J
    Lehto, VP
    Laine, E
    [J]. APPLIED SURFACE SCIENCE, 1997, 120 (3-4) : 191 - 198
  • [8] Thermal conductance of silicon interfaces directly bonded by room-temperature surface activation
    Sakata, Masanori
    Oyake, Takafumi
    Maire, Jeremie
    Nomura, Masahiro
    Higurashi, Eiji
    Shiomi, Junichiro
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (08)
  • [9] TOWARDS A ROOM-TEMPERATURE, SOLID-STATE, OXYGEN GAS SENSOR
    EGUCHI, T
    KUWANO, J
    [J]. MATERIALS RESEARCH BULLETIN, 1995, 30 (11) : 1351 - 1357
  • [10] Nanostructured porous silicon -: Optical properties, surface modification and sensor applications
    Jelínek, I
    Chvojka, T
    Vrkoslav, V
    Jindrich, J
    Lorenc, M
    Niznansky, D
    Nemec, I
    Král, V
    Dian, J
    [J]. CHIMIA, 2005, 59 (05) : 222 - 225
12345