In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices

This paper focuses on the techniques adopted to carefully characterize the dielectric constant of low k SOG (spin-on-glass), both for in-plane and out-of-plane measurements. In the case of out-of-plane dielectric constant measurement, the capacitance-voltage (C-V) sweep is utilised to measure the SOG capacitance. For in-plane dielectric constant measurement, intra capacitors are required and a novel technique of extracting coupling capacitance is presented. SOG A has a measured out-of-plane dielectric constant of 2.518+/-0.033. SOG B has measured in-plane dielectric constant of 4.86.