Calibration and matching of floating gate devices

被引：0

作者：

Millard, WP ^{[1
]}

Kalayjian, ZK ^{[1
]}

Andreou, AG ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21211 USA

来源：

ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL IV: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We measure the matching characteristics of floating gate MOSFET devices. Arrays of ten FG PFET devices were fabricated on two different runs of the same process. Matching characteristics were measured: 1) direct from the foundry, 2) after Fowler-Nordheim tunneling, 3) after self-limiting PFET hot-electron injection, and 4) after UV exposure. We also found significant threshold voltage drift in long-term memory tests.

引用

页码：389 / 392

页数：4

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