Calibration and matching of floating gate devices

被引:0
|
作者
Millard, WP [1 ]
Kalayjian, ZK [1 ]
Andreou, AG [1 ]
机构
[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21211 USA
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We measure the matching characteristics of floating gate MOSFET devices. Arrays of ten FG PFET devices were fabricated on two different runs of the same process. Matching characteristics were measured: 1) direct from the foundry, 2) after Fowler-Nordheim tunneling, 3) after self-limiting PFET hot-electron injection, and 4) after UV exposure. We also found significant threshold voltage drift in long-term memory tests.
引用
收藏
页码:389 / 392
页数:4
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