Direct wafer bonding for nanostructure preparations

被引：1
|
作者：
Moriceau, H. [1 ]
Rieutord, F. [2 ]
Morales, C. [1 ]
Charvet, A. M. [1 ]
Rayssac, O. [3 ]
Bataillou, B. [2 ,3 ]
Fournel, F. [1 ]
Eymery, J. [2 ]
Pascale, A. [1 ,2 ]
Gentile, P. [2 ]
Bavard, A. [1 ,2 ]
Meziere, J. [1 ]
Maleville, C. [3 ]
Aspar, B. [1 ,4 ]
机构：
[1] CEA GRE, CEA DRT LETI, 17 Rue Martyrs, F-38054 Grenoble 9, France
[2] CEA GRE, CEA DRFMC, 17 Rue Martyrs, F-38054 Grenoble 9, France
[3] Parc Technol Fontaine, SOITEC SA, F-38190 Bernin, France
[4] TRACIT Technol, F-38054 Grenoble, France
来源：
NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2 | 2007年 / 121-123卷
关键词：
direct wafer bonding; SOI; bonded heterostructures; Si-Si bonded structures; bonding interfaces; hydrophilic; hydrophobic; periodic networks; dislocations; nanometer scale;
D O I：
10.4028/www.scientific.net/SSP.121-123.29
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.
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页码：29 / 32
页数：4
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