Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

被引：13

作者：

Naber, W. J. M. ^{[1
]}

Craciun, M. F. ^{[1
]}

Lemmens, J. H. J. ^{[1
]}

Arkenbout, A. H. ^{[2
]}

Palstra, T. T. M. ^{[2
]}

Morpurgo, A. F. ^{[3
,4
]}

van der Wiel, W. G. ^{[1
]}

机构：

[1] Univ Twente, Inst Nanotechnol, MESA, NanoElect Grp, NL-7500 AE Enschede, Netherlands

[2] Univ Groningen, Zernike Inst Adv Mat, Solid State Chem Lab, NL-9747 AG Groningen, Netherlands

[3] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[4] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 05期

关键词：

Spintronics; Organic single-crystal; Field-effect transistor; Ferromagnetic electrodes; SPINTRONICS; PHYSICS; METAL;

D O I：

10.1016/j.orgel.2010.01.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：743 / 747

页数：5

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