Run-Time Reconfigurable Array using Magnetic RAM

被引:2
|
作者
Silva, Victor [1 ]
Oliveira, Luis B. [2 ]
Fernandes, Jorge R. [1 ]
Vestias, Mario P.
Neto, Horacio C. [1 ,2 ]
机构
[1] Univ Tecn Lisboa, UTL, IST, INESC ID, Lisbon, Portugal
[2] Univ Tecn Lisboa, IPL, IST, INESC ID, Lisbon, Portugal
关键词
reconfigurable array; MRAM; programmable fabrics;
D O I
10.1109/DSD.2009.198
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents the implementation of a coarse-grained Magnetic RAM based Reconfigurable Array. The Reconfigurable Array architecture is organized as a one-dimensional array of programmable ALU, with the configuration bits stored in magnetic random-access memories. The use of MRAM technology to implement run-time reconfigurable hardware devices is a very promising technological solution because MRAM can provide non-volatility with cell areas and access speeds comparable to those of SRAM, and with lower process complexity than flash memory. This type of coarse-grained array, where each reconfigurable element computes on 4-bit or larger input words, is more suitable to execute data-oriented algorithms and is more able to exploit larger amounts of operation-level parallelism than common fine-grained architectures. By substantially reducing the overhead for configurability, this coarse-grain architecture is also more apt to efficiently exploit run-time reconfiguration and therefore to take advantage of multi-context MRAM-based configuration memories.
引用
收藏
页码:74 / +
页数:3
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