PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering, The as-deposited 1.0 mu m-thick thin films were completely crystallized into the perovskite phase at 500 degrees C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively, The 1.0 mu m-thick thin film annealed at 650 degrees C for 60min has a remnant polarization Pr of 13.2 mu C/cm(2) and a coercive field Pc of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 mu m-thick thin film annealed at 600 degrees C for 60 min has a remnant polarization Pr of 16.3 mu C/cm(2) and a coercive fields Ec of 117.6 kV/cm.