PZT thin film preparation by pulsed DC magnetron sputtering

被引：14
|
作者：
Lin, Y. C. [1 ]
Chuang, H. A. [1 ]
Shen, J. H. [1 ]
机构：
[1] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 50007, Peoples R China
来源：
VACUUM | 2009年 / 83卷 / 06期
关键词：
PZT thin film; Pulsed DC magnetron sputtering; Metallic target; Deposition rate;
D O I：
10.1016/j.vacuum.2008.09.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pulsed DC magnetron sputtering was used in this study to prepare lead zirconate titanate (Pb(ZrxTi1-x)O-3, PZT) thin films. A single metallic target was used for the deposition onto a Pt/Ti/SiO2/Si substrate and parameters such as: pulse frequency, duty cycle, O-2/Ar flow ratio controlled so as to analyze the effect of the parameters on thin film deposition rate, crystalline structure and morphology. After the deposition, the thin film was annealed in a rapid thermal annealing (RTA) furnace. The experimental results showed that, when the pulse frequency was in the range of 10 kHz-100 kHz, along with the lowering of frequency and the oxygen argon flow rate ratio, the deposition rate gradually increased and the formation of PZT thin film perovskite phase was enhanced: however, if the oxygen argon flow rate ratio was too high, it caused the PZT thin film to generate a pyrochlore phase. However, when the duty cycle was in the range of 95%-75%, the highest deposition rate and better perovskite phase could be obtained in the range of 75%-80%. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：921 / 926
页数：6
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