Communication-Growth of <111> Nanotwinned Nickel Films on <111> Nanotwinned Cu Substrates

被引:1
|
作者
Chu, Yi-Cheng [1 ]
Chen, Chih [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
关键词
HIGH ELECTRICAL-CONDUCTIVITY; STRENGTH; COPPER; ELECTRODEPOSITION;
D O I
10.1149/2.0061710jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nickel has a high twinning energy of 110 MJ/m(2), and it is thus difficult to fabricate nanotwinned Ni (nt-Ni) films. In this study, we adopt <111>-oriented nanotwinned Cu films as a substrate for the growth of nt-Ni films, and successfully electroplate <111>-oriented Ni films with densely-packed nanotwins. The average twin spacing is only 22 nm, while the grain size is over 1 mu m. The nt-Ni film can be grown to a thickness of approximately 2.6 mu m; beyond that, the Ni film becomes nanocrystalline. This approach provides a promising method to fabricate <111>-oriented nt-Ni films with controlled microstructures. (C) 2017 The Electrochemical Society. All rights reserved.
引用
收藏
页码:P715 / P717
页数:3
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