Design of a Slab Tamm Plasmon Resonator Coupled to a Multistrip Array Waveguide for the Mid Infrared

被引:5
|
作者
Puhringer, Gerald [1 ]
Consani, Cristina [2 ]
Jannesari, Reyhaneh [1 ]
Fleury, Clement [2 ]
Dubois, Florian [2 ]
Spettel, Jasmin [2 ]
Dao, Thang Duy [2 ]
Stocker, Gerald [3 ]
Grille, Thomas [3 ]
Jakoby, Bernhard [1 ]
机构
[1] Johannes Kepler Univ Linz, Inst Microelect & Microsensors, A-4040 Linz, Austria
[2] Silicon Austria Labs GmbH, A-9524 Villach, Austria
[3] Infineon Technol Austria AG, A-9500 Villach, Austria
关键词
silicon photonics; Tamm plasmons; waveguide sensing; mid-infrared sensing; THERMAL EMISSION; DERIVATION; DIOXIDE;
D O I
10.3390/s22082968
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this work, we present and analyze a design of an absorber-waveguide system combining a highly sensitive waveguide array concept with a resonant selective absorber. The waveguide part is composed of an array of coupled strip waveguides and is therefore called a coupled strip array (CSA). The CSA is then coupled to the end of a slab Tamm plasmon (STP-) resonator, which is composed of a quasicrystal-like reflector formed by the patterning of a silicon slab and an interfacing tungsten slab. The concept describes an emitter-waveguide or waveguide-detector system featuring selective plasmon-enhanced resonant absorption or emission. These are crucial properties for corresponding optical on-chip integrated devices in context with evanescent field absorption sensing in fluids or gases, for example. Thus, the concept comprises a valuable and more cost-effective alternative to quantum cascade lasers. We designed the lateral dimensions of the STP resonator via a simple quasi-crystal approach and achieved strong narrowband resonances (emittance and Q-factors up to 85% and 88, respectively) for different silicon thicknesses and substrate materials (air and silicon oxide). Moreover, we analyze and discuss the sensitivity of the complete emitter-waveguide system in dependence on the slab thickness. This reveals the crucial correlation between the expected sensitivity assigned to the absorber-waveguide system and field confinement within the silicon.
引用
收藏
页数:11
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