InGaZnO nanowires were grown from amorphous InGaZnO thin films using Mo/Au-catalyzed Vapor-Liquid-Solid (VLS) growth process. The Mo/Au/amorphous InGaZnO stacked sample was annealed at 700 degrees C in N-2 atmosphere. The growth of InGaZnO nanowires was confirmed on the edge of the Mo thin film closest to the Mo/Au overlap. The Au or Mo-covered areas, on the other hand, were not found to be sites of nanowire growth. Nanowires have Mo contained Au nanoparticles at the tip, which suggests the VLS growth mechanism. TEM results also verified that the nanowires are single crystalline, and that their growth direction is along the c-axis. Published by AIP Publishing.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, J.
Li, X. F.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, X. F.
Lu, J. G.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Lu, J. G.
Ye, Z. Z.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ye, Z. Z.
Gong, L.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410004, Hunan, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gong, L.
Wu, P.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wu, P.
Huang, J.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Huang, J.
Zhang, Y. Z.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, Y. Z.
Chen, L. X.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Chen, L. X.
Zhao, B. H.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China