Growth of InGaZnO nanowires via a Mo/Au catalyst from amorphous thin film

被引:5
|
作者
Felizco, Jenichi Clairvaux [1 ]
Uenuma, Mutsunori [1 ]
Senaha, Daiki [1 ]
Ishikawa, Yasuaki [1 ]
Uraoka, Yukiharu [1 ]
机构
[1] Nara Inst Sci & Technol, Takayama Cho, Nara 6300192, Japan
关键词
OXIDE SEMICONDUCTORS; TRANSISTORS; PERFORMANCE; MECHANISM; LAYER;
D O I
10.1063/1.4993745
中图分类号
O59 [应用物理学];
学科分类号
摘要
InGaZnO nanowires were grown from amorphous InGaZnO thin films using Mo/Au-catalyzed Vapor-Liquid-Solid (VLS) growth process. The Mo/Au/amorphous InGaZnO stacked sample was annealed at 700 degrees C in N-2 atmosphere. The growth of InGaZnO nanowires was confirmed on the edge of the Mo thin film closest to the Mo/Au overlap. The Au or Mo-covered areas, on the other hand, were not found to be sites of nanowire growth. Nanowires have Mo contained Au nanoparticles at the tip, which suggests the VLS growth mechanism. TEM results also verified that the nanowires are single crystalline, and that their growth direction is along the c-axis. Published by AIP Publishing.
引用
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页数:4
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