Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

被引：12
|
作者：
SatoIwanaga, J
Fujimoto, K
Masato, H
Ota, Y
Inoue, K
Troyanovsky, B
Yu, ZP
Dutton, RW
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.553146
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Distortion simulations of GaAs MESFETs based on physical model and applying harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone inter-modulation distortion characteristics.
引用
收藏
页码：163 / 166
页数：4
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