Realization of the First GaN Based Tunnel Field-Effect Transistor

被引：0
|
作者：
Chaney, Alexander [1 ]
Turski, Henryk [1 ]
Nomoto, Kazuki [1 ]
Wang, Qingxiao [2 ]
Hu, Zongyang [1 ]
Kim, Moon [2 ]
Xing, Huili Grace [1 ]
Jena, Debdeep [1 ]
机构：
[1] Cornell Univ, Ithaca, NY 14850 USA
[2] Univ Texas Dallas, Richardson, TX 75080 USA
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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