Synthesis and Structural Characterization of Bulk Sb2Te3 Single Crystal

被引:1
|
作者
Sultana, Rabia [1 ,2 ]
Gahtori, Bhasker [1 ]
Meena, R. S. [1 ]
Awana, V. P. S. [1 ]
机构
[1] CSIR, Natl Phys Lab, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, NPL, New Delhi 110012, India
关键词
DIRAC CONE; BI2TE3;
D O I
10.1063/1.5032799
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850 degrees C) and slow cooling (2 degrees C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 001 alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional fourprobe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.
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页数:4
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