High-peak-power subnanosecond doubly Q-switched YVO4/Nd:YVO4 laser

被引：2

作者：

Qiao, Junpeng ^{[1
]}

Zhao, Shengzhi ^{[1
]}

Yang, Kejian ^{[1
]}

Zhao, Jia ^{[1
]}

Li, Guiqiu ^{[1
]}

Li, Dechun ^{[1
]}

Li, Tao ^{[1
]}

Qiao, Wenchao ^{[1
]}

Lu, Jianren ^{[1
]}

Chu, Hongwei ^{[1
]}

Luan, Chao ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, 27 Shanda South Rd, Jinan 250100, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Double Q-switches; Subnanosecond pulse width; High-peak power; GAAS SATURABLE ABSORBER; PULSE-WIDTH REDUCTION; MICROCHIP LASERS; AO MODULATOR; ND-GDVO4; LASER; CAVITY;

D O I：

10.1007/s11082-016-0457-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-peak power subnanosecond doubly Q-switched YVO4/Nd:YVO4 laser modulated by an acousto-optic modulator (AOM) and a GaAs saturable absorber has been achieved. A maximum average output power of 1.53 W was obtained under a maximum incident pump power of 8.5 W and an AOM repetition rate of 10 kHz, corresponding to a minimum pulse width as short as 800 ps and a maximum peak power as high as 191 kW. In comparison with singly Q-switched laser with a GaAs saturable absorber, the dual-loss-modulated Q-switched laser could generate pulses with higher peak powers, narrower pulse durations and better pulse symmetry. The numerical simulations were in agreement with the experimental results well.

引用

页码：1 / 10

页数：10

共 50 条

[21] Passively Q-switched yellow laser formed by a self-Raman composite Nd:YVO4/YVO4 crystal
Omatsu, T.
Lee, A.
Pask, H. M.
Piper, J.
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 97 (04): : 799 - 804
[22] 1.36 W Passively Q-Switched YVO4/Nd:YVO4 Laser With a WS2 Saturable Absorber
Tang, Wenjing
Wang, Yonggang
Yang, Kejian
Zhao, Jia
Zhao, Shengzhi
Li, Guiqiu
Li, Dechun
Li, Tao
Qiao, Wenchao
IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (05) : 470 - 473
[23] Passively Q-switched yellow laser formed by a self-Raman composite Nd:YVO4/YVO4 crystal
T. Omatsu
A. Lee
H. M. Pask
J. Piper
Applied Physics B, 2009, 97 : 799 - 804
[24] Passively Q-switched and mode-locked YVO4/Nd:YVO4/Nd:YVO4 laser based on a MoS2 saturable absorber at 1342.5 nm
Zhang, Gang
Wang, Yonggang
Wang, Jiang
Jiao, Zhiyong
OPTICS AND LASER TECHNOLOGY, 2019, 109 : 293 - 296
[25] High-peak-power diode-pumped actively Q-switched Nd: YAG intracavity Raman laser with an undoped YVO4 crystal
Su, K. W.
Chang, Y. T.
Chen, Y. F.
SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES, 2008, 6871 : J8712 - J8712
[26] High power Q-switched and frequency doubled Nd:YVO4 miniature lasers
Taira, T
Suzudo, T
Kobayashi, T
NONLINEAR FREQUENCY GENERATION AND CONVERSION, 1996, 2700 : 323 - 328
[27] Diode-end-pumped Q-switched composite YVO4/Nd:YVO4/YVO4 crystal self-Raman second-Stokes laser
Du, Chenlin
Guo, Yayin
Yu, Yongqin
Huang, Guoxi
Ruan, Shuangchen
LASER PHYSICS LETTERS, 2013, 10 (05)
[28] High-power passively Q-switched Nd:YVO4 UV laser at 355 nm
Y. J. Huang
Y. P. Huang
P. Y. Chiang
H. C. Liang
K. W. Su
Y.-F. Chen
Applied Physics B, 2012, 106 : 893 - 898
[29] High-power passively Q-switched Nd:YVO4 UV laser at 355 nm
Huang, Y. J.
Huang, Y. P.
Chiang, P. Y.
Liang, H. C.
Su, K. W.
Chen, Y. -F.
APPLIED PHYSICS B-LASERS AND OPTICS, 2012, 106 (04): : 893 - 898
[30] Passively Q-switched Nd:YVO4 Laser operating at 914 nm
Naegele, Marco
Stoppel, Klaus
Ridderbusch, Heiko
Thomas, Dekorsy
SOLID STATE LASERS XXIX: TECHNOLOGY AND DEVICES, 2020, 11259

← 1 2 3 4 5 →