Zero bias anomaly in the two-site Anderson-Hubbard model with Gaussian distribution for disorder

被引:0
|
作者
Nguyen, Oanh K. T. [1 ,2 ]
Nam Van Tran [3 ]
Giang Huong Bach [3 ]
机构
[1] Elect Power Univ, 235 Hoang Quoc Viet, Hanoi, Vietnam
[2] Vietnam Natl Univ, Univ Engn & Technol, 144 Xuan Thuy, Hanoi, Vietnam
[3] Vietnam Natl Univ, Computat Mat Sci Lab, Fac Phys, Hanoi Univ Sci, 334 Nguyen Trai, Hanoi, Vietnam
关键词
D O I
10.1088/1742-6596/1274/1/012008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Anderson-Hubbard model considers the correlation between disorder and other interactions in a strongly correlated electron system. Both disorder and correlations drive the metal-insulator transition but the densities of states behave in different ways. The zero bias anomaly (ZBA) referring to the V-dip shape of the density of states at the Fermi energy occurs in the strong disorder and strong interaction regime instead of a hard Coulomb gap in an insulator phase of strongly correlated interacting systems. In this paper, we use a Gaussian distribution for disorder to examine a two-site Anderson-Hubbard model. We also explain comprehensively the relationship between the phase diagram of ground states with various numbers of electrons and the behavior of the density of states. Furthermore, we want to investigate the effect of disorder distribution on the formation of the ZBA which originates from a hopping mechanism in two specific configurations.
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页数:13
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