Disorder-induced zero-bias anomaly in the Anderson-Hubbard model: Numerical and analytical calculations

被引:6
|
作者
Chen, Hong-Yi [1 ]
Wortis, R. [2 ]
Atkinson, W. A. [2 ]
机构
[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 11677, Taiwan
[2] Trent Univ, Peterborough, ON K9J 7B8, Canada
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 04期
基金
加拿大自然科学与工程研究理事会;
关键词
METAL-INSULATOR TRANSITIONS; CORRELATED ELECTRONS; INFINITE DIMENSIONS; MEAN-FIELD; DRIVEN;
D O I
10.1103/PhysRevB.84.045113
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a combination of numerical and analytical calculations, we study the disorder-induced zero bias anomaly (ZBA) in the density of states of strongly correlated systems modeled by the two-dimensional Anderson-Hubbard model. We find that the ZBA comes from the response of the nonlocal inelastic self-energy to the disorder potential, a result which has implications for theoretical approaches that retain only the local self-energy. Using an approximate analytic form for the self-energy, we derive an expression for the density of states of the two-site Anderson-Hubbard model. Our formalism reproduces the essential features of the ZBA, namely that the width is proportional to the hopping amplitude t and is independent of the interaction strength and disorder potential.
引用
收藏
页数:11
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