One-Dimensional Zn-Doped In2O3-SnO2 Superlattice Nanostructures

被引：16

作者：

Wang, Nengwen ^{[1
]}

Yang, Y. H. ^{[1
]}

Chen, Jian ^{[1
]}

Xu, Ningsheng ^{[1
]}

Yang, Guowei ^{[1
]}

机构：

[1] Zhongshan Sun Yat Sen Univ, Sch Phys & Engn, Inst Optoelect & Funct Composite Mat, Nanotechnol Res Ctr,State Key Lab Optoelect Mat &, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 07期

基金：

中国国家自然科学基金;

关键词：

GROWTH; PHOTOLUMINESCENCE;

D O I：

10.1021/jp910802z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

One-dimensional (ID) Zn-doped In2O3-SnO2, superlattice nanostructures have been fabricated on single-crystal silicon substrates by the layer-by-layer growth mode via the thermal chemical vapor transport and condensation with Au catalysts. The morphology, structure, and composition of the as-synthesized 1D superlattice were analyzed in detail. To exploit the potential applications of the fabricated nanostructures, the field emission properties of samples were characterized. The growth mechanism of the 1D Zn-doped In2O3-SnO2, superlattice nanostructures was discussed on the basis of the vapor-liquid-solid process.

引用

页码：2909 / 2912

页数：4

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