Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions

被引：11
|
作者：
Appelbaum, Ian [1 ]
Tinkey, Holly N.
Li, Pengke
机构：
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 22期
基金：
美国国家科学基金会;
关键词：
INJECTION; TRANSPORT; SILICON; POLARIZATION;
D O I：
10.1103/PhysRevB.90.220402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.
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页数：6
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