Conducting Intrinsic Nanocrystalline Silicon Films with High Growth Rate Prepared at 27.12 MHz Frequency

被引：0
|
作者：
Mondal, Praloy [1 ]
Das, Debajyoti [1 ]
机构：
[1] Indian Assoc Cultivat Sci, Nanosci Grp, Energy Res Unit, Kolkata 700032, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Nanocrystalline silicon; High growth rate; Thin film; PECVD; PLASMA;
D O I：
10.1063/1.4872556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth and characterization of intrinsic nanocrystalline silicon (nc-Si:H) thin films have been studied using 27.12 MHz H-2-diluted SiH4 plasma in PECVD, by optimizing the gas pressure during deposition. High electrical conductivity (similar to 10(-3) S cm(-1)) and narrow optical gap (1.762 eV) of the mostly crystalline (similar to 80%) network with optimum hydrogenation and dominance towards thermodynamically preferred (220) crystallographic orientation, obtained at a high growth rate (39 nm/min), signify its promising use in the fabrication of devices e. g., solar cells in particular.
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收藏
页码：236 / +
页数：2
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