Intrinsic interface states in InAs-AlSb heterostructures

被引：9

作者：

Raouafi, F. ^{[1
]}

Benchamekh, R. ^{[2
,3
]}

Nestoklon, M. O. ^{[2
,4
]}

Jancu, J-M ^{[5
,6
]}

Voisin, P. ^{[2
]}

机构：

[1] Inst Preparatoire Etud Sci & Tech, Lab Physicochim Microstruct & Microsyst, BP51, La Marsa 2070, Tunisia

[2] CNRS, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France

[3] Tyndall Natl Inst, Cork, Ireland

[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] Univ Europeenne Bretagne, FOTON, INSA Rennes, Rennes, France

[6] CNRS, Rennes, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2016年 / 28卷 / 04期

关键词：

interface states; tight-binding; quantum well; ENVELOPE-FUNCTION APPROXIMATION; LATTICE BAND-STRUCTURE; SEMICONDUCTOR HETEROJUNCTIONS; ALSB/INAS HETEROSTRUCTURES; OPTICAL ANISOTROPY; SUPERLATTICES; OFFSETS; STRAIN; ENERGY; LOCALIZATION;

D O I：

10.1088/0953-8984/28/4/045001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We examine the formation of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs-AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended-basis spds*tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole-like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb-InAs band offset.

引用

页数：7

共 50 条

[21] INTERFACE CONTROL IN INAS/ALSB SUPERLATTICES
BENNETT, BR
SHANABROOK, BV
GLASER, ER
APPLIED PHYSICS LETTERS, 1994, 65 (05) : 598 - 600
[22] SURFACE-LAYER MODULATION OF ELECTRON CONCENTRATIONS IN INAS-ALSB QUANTUM-WELLS
NGUYEN, C
BRAR, B
KROEMER, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1706 - 1709
[23] Exchange enhancement of the g factor in InAs/AlSb heterostructures
Aleshkin, V. Ya.
Gavrilenko, V. I.
Ikonnikov, A. V.
Krishtopenko, S. S.
Sadofyev, Yu. G.
Spirin, K. E.
SEMICONDUCTORS, 2008, 42 (07) : 828 - 833
[24] ANOMALOUS ANDREEV CONDUCTANCE IN INAS-ALSB QUANTUM-WELL STRUCTURES WITH NB ELECTRODES
NGUYEN, C
KROEMER, H
HU, EL
PHYSICAL REVIEW LETTERS, 1992, 69 (19) : 2847 - 2850
[25] AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
Desplanque, L.
El Kazzi, S.
Codron, J. -L.
Wang, Y.
Ruterana, P.
Moschetti, G.
Grahn, J.
Wallart, X.
APPLIED PHYSICS LETTERS, 2012, 100 (26)
[26] GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
El Kazzi, S.
Desplanque, L.
Coinon, C.
Wang, Y.
Ruterana, P.
Wallart, X.
APPLIED PHYSICS LETTERS, 2010, 97 (19)
[27] SPATIALLY INDIRECT PHOTOLUMINESCENCE FROM INAS/ALSB HETEROSTRUCTURES
FUCHS, F
SCHMITZ, J
RALSTON, JD
KOIDL, P
HEITZ, R
HOFFMANN, A
SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (01) : 35 - 40
[28] Optical and structural investigation of InAs/AlSb/GaSb heterostructures
Prevot, I
Marcadet, X
Durand, O
Bisaro, R
Julien, FH
OPTICAL MATERIALS, 2001, 17 (1-2) : 193 - 195
[29] RESONANT TUNNELING IN POLYTYPE INAS/ALSB/GASB HETEROSTRUCTURES
LONGENBACH, KF
LUO, LF
XIN, S
WANG, WI
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 651 - 658
[30] Exchange enhancement of the g factor in InAs/AlSb heterostructures
V. Ya. Aleshkin
V. I. Gavrilenko
A. V. Ikonnikov
S. S. Krishtopenko
Yu. G. Sadofyev
K. E. Spirin
Semiconductors, 2008, 42 : 828 - 833

← 1 2 3 4 5 →