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Electronic structure and optical properties of Rare-Earth based ErPdSb half Heusler Compound: A GGA plus U study
被引:10
|作者:
Satyam, Jagdish Kumar
[1
]
Saini, Sapan Mohan
[1
]
机构:
[1] NIT Raipur, Dept Phys, Raipur 492010, Madhya Pradesh, India
关键词:
GGA plus U approximation;
Hubbard parameter;
Electronic properties;
Optical properties;
ErPdSb compound;
Half-metallic;
D O I:
10.1016/j.matpr.2021.02.440
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The electronic and optical properties of rare-earth based half-Heusler ErPdSb compound are investigated by the using of first-principle density functional theory. The generalized gradient approximation (GGA) with spin-orbit coupling (SOC) and Hubbard parameter (U) have been used for exchange and correlation effect. Our calculations of electronic band structure show the half metallic nature of ErPdSb compound. The majority spin (up) states found semiconductor nature with a narrow indirect band gap 0.25 eV. While minority spin (down) states found metallic with no gap. The optical properties are investigated via optical conductivity, reflectivity along with other related optical constants such as absorption coefficient and refractive index. (C) 2021 Elsevier Ltd. All rights reserved.
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页码:3040 / 3044
页数:5
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