共 50 条
- [31] Ge/Si nanowire heterostructures as high-performance field-effect transistorsNATURE, 2006, 441 (7092) : 489 - 493Xiang, Jie论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USALu, Wei论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USAHu, Yongjie论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USAWu, Yue论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USAYan, Hao论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USALieber, Charles M.论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
- [32] Ge/Si nanowire heterostructures as high-performance field-effect transistorsNature, 2006, 441 : 489 - 493Jie Xiang论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied SciencesWei Lu论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied SciencesYongjie Hu论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied SciencesYue Wu论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied SciencesHao Yan论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied SciencesCharles M. Lieber论文数: 0 引用数: 0 h-index: 0机构: Department of Chemistry and Chemical Biology,Division of Engineering and Applied Sciences
- [33] Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast SwitchingPHYSICAL REVIEW APPLIED, 2015, 4 (04):Qi, Yubo论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Dept Chem, Makineni Theoret Labs, Philadelphia, PA 19104 USA Univ Penn, Dept Chem, Makineni Theoret Labs, Philadelphia, PA 19104 USARappe, Andrew M.论文数: 0 引用数: 0 h-index: 0机构: Univ Penn, Dept Chem, Makineni Theoret Labs, Philadelphia, PA 19104 USA Univ Penn, Dept Chem, Makineni Theoret Labs, Philadelphia, PA 19104 USA
- [34] Nonvolatile ferroelectric field-effect transistorsNATURE COMMUNICATIONS, 2020, 11 (01)Chai, Xiaojie论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaJiang, Jun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, Qinghua论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaHou, Xu论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Dept Engn Mech, Hangzhou 310027, Peoples R China Key Lab Soft Machines & Smart Devices Zhejiang Pr, Hangzhou 310027, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaMeng, Fanqi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaWang, Jie论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Dept Engn Mech, Hangzhou 310027, Peoples R China Key Lab Soft Machines & Smart Devices Zhejiang Pr, Hangzhou 310027, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaGu, Lin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaJiang, An Quan论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
- [35] Nonvolatile ferroelectric field-effect transistorsNature Communications, 11Xiaojie Chai论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsJun Jiang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsQinghua Zhang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsXu Hou论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsFanqi Meng论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsJie Wang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsLin Gu论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsDavid Wei Zhang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering MechanicsAn Quan Jiang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of ASIC & Systems,Department of Engineering Mechanics
- [36] Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient methodAPPLIED PHYSICS LETTERS, 2023, 122 (11)Li, Yilin论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaZhu, Hui论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaLiu, Xing论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaXu, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaPan, Shijie论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaXiang, Jinjuan论文数: 0 引用数: 0 h-index: 0机构: Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaZhou, Lixing论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaYao, Zhiwen论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaSun, Yerong论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaFeng, Shiwei论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
- [37] Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical ConsiderationsIEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) : 1410 - 1417Gaillardin, Marc论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceRaine, Melanie论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceMartinez, Martial论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceDuhamel, Olivier论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceRiffaud, Jonathan论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceLagutere, Thierry论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceMarcandella, Claude论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FrancePaillet, Philippe论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceRichard, Nicolas论文数: 0 引用数: 0 h-index: 0机构: CEA, DAM, DIF, F-91297 Arpajon, France CEA, DAM, DIF, F-91297 Arpajon, FranceVinet, Maud论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI Minatec, F-38000 Grenoble, France CEA, DAM, DIF, F-91297 Arpajon, FranceAndrieu, Francois论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI Minatec, F-38000 Grenoble, France CEA, DAM, DIF, F-91297 Arpajon, FranceBarraud, Sylvain论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI Minatec, F-38000 Grenoble, France CEA, DAM, DIF, F-91297 Arpajon, France
- [38] Deformable Organic Nanowire Field-Effect TransistorsADVANCED MATERIALS, 2018, 30 (07)Lee, Yeongjun论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South Korea Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South Korea论文数: 引用数: h-index:机构:Kim, Taeho Roy论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaGu, Xiaodan论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA Univ Southern Mississippi, Sch Polymers & High Performance Mat, Hattiesburg, MS 39406 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaKim, Yeongin论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaWang, Ging-Ji Nathan论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaWu, Hung-Chin论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaPfattner, Raphael论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaTo, John W. F.论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaKatsumata, Toru论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaSon, Donghee论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaKang, Jiheong论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaMatthews, James R.论文数: 0 引用数: 0 h-index: 0机构: Corning Inc, Corning, NY 14831 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaNiu, Weijun论文数: 0 引用数: 0 h-index: 0机构: Corning Inc, Corning, NY 14831 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaHe, Mingqian论文数: 0 引用数: 0 h-index: 0机构: Corning Inc, Corning, NY 14831 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaSinclair, Robert论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaCui, Yi论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaTok, Jeffery B. -H.论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaLee, Tae-Woo论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, PLUS SNU Mat Div Educ Creat Global Leaders BK21, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South KoreaBao, Zhenan论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South Korea
- [39] Silicon nanowire tunneling field-effect transistorsAPPLIED PHYSICS LETTERS, 2008, 92 (19)Bjoerk, M. T.论文数: 0 引用数: 0 h-index: 0机构: IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, SwitzerlandKnoch, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, SwitzerlandSchmid, H.论文数: 0 引用数: 0 h-index: 0机构: IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, SwitzerlandRiel, H.论文数: 0 引用数: 0 h-index: 0机构: IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, SwitzerlandRiess, W.论文数: 0 引用数: 0 h-index: 0机构: IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
- [40] Ultrathin CdSe nanowire field-effect transistorsJOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (01) : 170 - 172Khandelwal, A论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USAJena, D论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USAGrebinski, JW论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USAHull, KL论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USAKuno, MK论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA