Surface mobility in silicon at large operating temperature

被引：0

作者：

Reggiani, S ^{[1
]}

Valdinoci, M ^{[1
]}

Colalongo, L ^{[1
]}

Rudan, M ^{[1
]}

Baccarani, G ^{[1
]}

Stricker, A ^{[1
]}

Illien, F ^{[1
]}

Felber, N ^{[1
]}

Fichtner, W ^{[1
]}

Mettler, S ^{[1
]}

Lindenkreuz, S ^{[1
]}

Zullino, L ^{[1
]}

机构：

[1] Univ Bologna, Adv Res Ctr Elect Syst, I-40136 Bologna, Italy

来源：

SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an experimental investigation on high-temperature carrier mobility in silicon inversion layers is carried out with the aim of improving our understanding of carrier transport at the onset of second breakdown. Special MOSFET structures suitable for Hall measurements were designed and manufactured using the BCD-3 technology available at ST-Microelectronics. Hall measurements were carried out using a special measurement setup that allows operating temperatures in excess of 400degreesC to be reached within the polar expansions of a commercial magnet. A novel extraction methodology allowing for the determination of the Hall factor and the carrier mobility against impurity concentration and lattice temperature was devised. Finally, a compact mobility model suitable for implementation in device simulators has been worked out, implemented in the DESSIS(C) code and validated within an industrial environment.

引用

页码：15 / 20

页数：6

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